Vital Materials provides gallium arsenide (GaAs), germanium (Ge) and indium phosphide (InP) substrates as well as related products. Vital Materials is one of the leader in Chinese GaAs wafer market. Produce both semiconducting and semi-insulating GaAs and InP substrates. Electrical properties are customized based on customer requirements.
We control the conductive type (n and p type) and electrical property parameters of crystals by adjusting the mix of elements and concentrations during the process of crystal growth. Standard doping elements include carbon (C), silicon (Si), iron (Fe), sulfur (S), zinc (Zn).
Vital Materials processes the substrate wafer to a highly uniform flatness with advanced high-precision wire-cutting equipment and high-flatness grinding and polishing equipment. CMP polishing process, cleaning process and packaging process provides for high-quality Epi-ready substrate wafers for epitaxy manufacturers.
Vital Materials provides 2"-6" GaAs wafers including semi-insulating GaAs (un-doped), and semiconducting GaAs (Si-doped, Zn-doped).
Vital Materials provides 2", 3", 4" InP wafer, including un-doped InP wafer, Fe-doped InP wafer, S-doped InP wafer, and Zn-doped InP wafer.
Vital Materials provides 4" and 6" Germanium wafers, with a resistivity from 0.05 Ω·cm to over 50Ω·cm.